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US 2003/0155604 A1Published application
Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Pierre C. Fazan
Life of this patent
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Abstract
A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie between the conductive plug and the oxidation resistant layer. An insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant.
Claims38
An electrode assembly comprising:
- an insulative structure which defines at least one opening that exposes an active area of a semiconductor device;
- a conductive plug consisting essentially of a first material within the opening and electrically coupled to the active area of the semiconductor device;
- a first conductive layer consisting essentially of a second material and being substantially within the opening, with the second material not identical to the first material;
- and
- a second conductive layer substantially outside the opening, overlying the first conductive layer, and electrically coupled to the first conductive layer.
2 more elements
An electrode assembly for a semiconductor device, comprising:
- an insulative structure which defines at least one opening that exposes an active area of a semiconductor device;
- a conductive plug consisting essentially of a first material within the one opening and electrically coupled to the active area of the semiconductor device;
- a first conductive layer consisting essentially of a second material and substantially within the one opening and electrically coupled to the plug, with the second material not identical to the first material;
- and
- means for preventing oxidation overlying and electrically coupled to the first conductive layer.
2 more elements
A memory device comprising:
- an insulative structure which defines at least one opening that exposes an active area of a semiconductor device;
- a conductive plug within the one opening;
- an electrode having:
- a first conductive layer consisting essentially of a material different from that of the conductive plug, contained substantially within the one opening, and overlying the plug;
- a second conductive layer overlying the first conductive layer and being in electrical contact with the first conductive layer.
2 more elements
A capacitor in a semiconductor device, the capacitor proximate an insulator layer having an opening and a conductive plug formed substantially within the opening and including a first material, the capacitor comprising:
- a first electrode;
- and
- a second electrode proximate the first electrode, the second electrode including:
- a first conductive layer within the opening and overlying the conductive plug wherein the first conductive layer consists essentially of a second material not identical to the first material;
- and
- a second conductive layer overlying the first conductive layer, the first conductive layer and the second conductive layer being in electrical contact with one another.
3 more elements
The capacitor of claim 56, wherein said dielectric layer has a dielectric constant greater than 50.
A capacitor in a semiconductor device, the capacitor proximate an oxide structure having an opening and a conductive plug formed substantially within the opening and including a first material, the capacitor comprising:
- a cell plate electrode;
- and
- a first electrode spaced from the cell plate electrode, with the first electrode including:
- a first conductive layer formed substantially within the opening and overlying the conductive plug wherein the first conductive layer is fonned from a second material;
- and
- a second conductive layer formed substantially outside the opening and overlying the first conductive layer, and electrically coupled to the first conductive layer.
3 more elements
A dynamic random access memory device, comprising:
- an oxide structure that defines at least one opening;
- a conductive plug formed in the one opening;
- a capacitor which comprises:
- a first conductive layer substantially within the one opening and over the plug;
- and
- a second conductive layer substantially outside the opening, over the first layer, and electrically coupled to the first conductive layer to define an electrode of the capacitor, wherein the plug is made of a first material and the first layer is made of a second material that is different from the first material.
3 more elements
A memory device, comprising:
- a substrate including an opening;
- an access transistor;
- a storage cell having a first electrode, a dielectric layer and a second electrode, the first electrode including a conductive, first barrier layer in the opening and a oxidation resistant second layer on the first layer, the second layer being different than the first layer;
- and
- a conductive plug operatively connecting the access transistor to the storage cell, the conductive plug including a conductive polysilicon layer and a conductive, a third layer on the polysilicon layer and underlying the first barrier layer in the opening.
2 more elements
A method for fabricating a capacitor having a first and a second electrode, comprising:
- forming an insulative layer on a surface;
- forming an opening in the insulative layer to expose a portion of the surface;
- forming a conductive plug in the opening, the conductive plug forming a first portion of the first electrode of the capacitor, the conductive plug recessed below a surface of the insulative layer;
- forming a first conductive layer overlying the conductive plug, the first conductive layer forming a second portion of the first electrode;
- forming a second conductive layer, for preventing diffusion of atoms, in the opening and overlying the first conductive layer such that the second conductive layer is surrounded on sidewalls by the insulative layer, the second conductive layer forming a third portion of the first electrode, the first conductive layer reducing a contact resistance between the conductive plug and the second conductive layer;
- and
- forming a third conductive layer overlying the second conductive layer to form a fourth portion of the first electrode.
4 more elements
A method for fabricating a capacitor having a first and a second electrode, comprising:
- forming an insulative layer overlying a surface;
- forming an opening in the insulative layer to expose a portion of the surface;
- forming a conductive plug in the opening, the conductive plug forming a first portion of the first electrode of the capacitor, the conductive plug recessed below a surface of the insulative layer;
- forming a first conductive layer overlying the conductive plug, the first conductive layer forming a second portion of the first electrode;
- forming a second conductive layer, for preventing diffusion of atoms, in the opening and overlying the first conductive layer such that the second conductive layer is surrounded on sidewalls by the insulative layer, the second conductive layer forming a third portion of the first electrode, the first conductive layer reducing a contact resistance between the conductive plug and the second conductive layer;
- forming a third conductive layer overlying the second conductive layer to form a fourth portion of the first electrode;
- forming a dielectric layer to overlie the third conductive layer, the third conductive layer and the insulative layer substantially preventing oxidation of the second conductive layer;
- and
- forming the second electrode overlying the dielectric layer, the first and the second electrode and the dielectric layer forming the capacitor.
6 more elements
A method for fabricating a capacitor having a first and a second electrode, comprising:
- forming an insulative layer overlying a surface;
- forming an opening in the insulative layer to expose a portion of the surface;
- forming a conductive plug in the opening, the conductive plug forming a first portion of the first electrode of the capacitor, the conductive plug recessed below a surface of the insulative layer;
- forming a first conductive layer overlying the conductive plug, the first conductive layer forming a second portion of the first electrode;
- forming a second conductive layer, for preventing diffusion of atoms, in the opening and overlying the first conductive layer such that the second conductive layer is surrounded on sidewalls by the insulative layer, the second conductive layer forming a third portion of the first electrode, the first conductive layer reducing a contact resistance between the conductive plug and the second conductive layer;
- forming a third conductive layer overlying the second conductive layer to form a fourth portion of the first electrode;
- forming a dielectric layer to overlie the third conductive layer, the third conductive layer and the insulative layer substantially preventing oxidation of the second conductive layer;
- and
- forming the second electrode overlying the dielectric layer, the first and the second electrode and the dielectric layer forming the capacitor.
6 more elements
Dependencies are inferred from the claim text.