Smiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkihiko Tsuzumitani, Hisashi Ogawa, Yasutoshi Okuno, Yoshihiro Mori
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Abstract
A semiconductor device has a capacitance insulating film having a perovskite structure represented by the general formula ABO3 (where each of A and B is a metal element) and first and second electrodes opposed to each other with the capacitance insulating film interposed therebetween. The capacitance insulating film is formed such that the composition of the metal element A or B is higher in the region thereof adjacent the first electrode than in the other region thereof.
Claims14
A method for fabricating a semiconductor device including a capacitance insulating film having a perovskite structure represented by a general formula ABO3 (where each of A and B is a metal element), the method comprising:
- a first step of forming a precipitation layer forming film containing the metal element A or B;
- a second step of forming a first electrode forming film on the precipitation layer forming film;
- a third step of patterning the first electrode forming film to form a first electrode from the first electrode forming film;
- a fourth step of annealing the first electrode to form, on a surface of the first electrode, a precipitation layer composed of the precipitated metal element A or B composing the precipitation layer forming film;
- a fifth step of forming, by chemical vapor deposition, the capacitance insulating film such that the first electrode including the precipitation layer is covered therewith;
- and
- a sixth step of forming a second electrode forming film such that the capacitance insulating film is covered therewith.
A method for fabricating a semiconductor device including a capacitance insulating film having a perovskite structure represented by a general formula ABO3 (where each of A and B is a metal element), the method comprising:
- a first step of forming a precipitation layer forming film containing the metal element A or B;
- a second step of forming a first electrode forming film on the precipitation layer forming film;
- a third step of annealing the first electrode to form, on a surface of the first electrode, a precipitation layer composed of the precipitated metal element A or B composing the precipitation layer forming film;
- a fourth step of patterning the first electrode forming film to form a first electrode from the first electrode forming film;
- a fifth step of forming, by chemical vapor deposition, the capacitance insulating film such that the first electrode including the precipitation layer is covered therewith;
- and
- a sixth step of forming a second electrode forming film such that the capacitance insulating film is covered therewith.
A semiconductor device comprising:
- a capacitance insulating film having a perovskite structure represented by a general formula ABO3 (where each of A and B is a metal element);
- and
- first and second electrodes opposed to each other with the capacitance insulating film interposed therebetween,
- the capacitance insulating film being formed such that a composition of the metal element A or B is higher in a region thereof adjacent the first electrode than in the other region thereof.
Dependencies are inferred from the claim text.