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US 2003/0155591 A1Published application
Field effect transistor and method for producing a field effect transistor
AssigneeInfineon Technologies AG
InventorFranz Kreupl
Life of this patent
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Abstract
The invention relates to a field effect transistor with a drain region, a source region, a channel region and a gate region. The gate region is provided with a metal layer.
Claims9
Field-effect transistor, having
- an electrically nonconductive substrate,
- a drain region,
- a source region,
- having a channel region between the drain region and the source region,
- having a gate region, by means of which the channel region can be controlled,
- the channel region having a metal layer.
3 more elements
Process for fabricating a field-effect transistor,
- in which a drain region and a source region are formed on a substrate,
- in which a metal layer which forms a channel region is applied to the substrate between the drain region and the source region,
- in which a separating layer is applied to the metal layer and between the drain region and the source region,
- in which a gate region is formed on the separating layer, the gate region being separated from the drain region, the source region and the channel region by the separating layer, in such a manner that the channel region can be controlled by means of the gate region.
1 more element
Dependencies are inferred from the claim text.