Methods and devices using group III nitride compound semiconductor
AssigneeToyoda Gosei Co., Ltd.
InventorsNorikatsu Koide, Hisaki Kato
Life of this patent
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Abstract
A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2 layer, and grows epitaxially on the SiO2 layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.
Claims36
A group III nitride compound semiconductor comprising:
- a silicon (Si) substrate;
- a first layer which is formed on (111) plane of said silicon substrate such that substrate-exposed portions are formed in a scattered manner and on which a group III nitride compound semiconductor does not grow epitaxially;
- and
- a second layer which grows epitaxially on substrate-exposed portions, or the regions which are not covered by said first layer, and which grows epitaxially on the regions which are covered by said first layer in lateral direction.
A group III nitride compound semiconductor comprising:
- a silicon (Si) substrate;
- a first layer which is formed on (111) plane of said silicon substrate and made of a group III nitride compound semiconductor;
- a second layer which is formed on said first layer such that first layer-exposed portions are formed in a scattered manner and on which a group III nitride compound semiconductor does not grow epitaxially;
- a third layer which grows epitaxially on said first layer-exposed portions, or the regions which are not covered by said second layer, and which grows epitaxially on the regions which are covered by said second layer in a lateral direction.
A method for manufacturing a group III nitride compound semiconductor on a silicon (Si) substrate, comprising:
- forming a first layer on (111) plane of said silicon (Si) substrate such that substrate-exposed portions are formed in a scattered manner and on which a group III nitride compound semiconductor does not grow epitaxially;
- growing a group III nitride compound semiconductor on the regions which are not covered by said first layer epitaxially;
- and
- growing a second layer made of a group III nitride compound semiconductor epitaxially on the regions which are covered by said first layer in lateral direction.
A method for manufacturing a group III nitride compound semiconductor on a silicon (Si) substrate, comprising:
- forming a first layer on (111) plane of said silicon (Si) substrate such that substrate-exposed portions are formed in a scattered manner and on which a group III nitride compound semiconductor does not grow epitaxially;
- forming a second layer made of a group III nitride compound semiconductor by growing epitaxially on substrate-exposed portions which are not covered by said first layer and growing epitaxially on the regions which are covered by said first layer in lateral direction;
- forming a third layer on said second layer so as to cover the regions which are not covered by said first layer;
- growing said third layer epitaxially on the regions of said second layer which are not covered by said third layer;
- and
- forming a fourth layer made of a group III nitride compound semiconductor by growing epitaxially on the regions which are covered by said third layer in lateral direction.
A method for manufacturing a group III nitride compound semiconductor on a silicon (Si) substrate, comprising:
- forming a first layer comprising a group III nitride compound semiconductor on (111) plane of said silicon substrate;
- forming a second layer on said first layer such that exposed portions of said first layer are formed in a scattered manner and on which a group III nitride compound semiconductor does not grow epitaxially;
- and
- forming a third layer made of a group III nitride compound semiconductor by growing epitaxially on said exposed portions of said first layer which are not covered by said second layer and growing epitaxially on the regions which are covered by said second layer in a lateral direction.
A method for manufacturing a group III nitride compound semiconductor on a silicon (Si) substrate, comprising:
- forming a first layer comprising a group III nitride compound semiconductor on a (111) plane of said silicon substrate;
- forming a second layer on said fist layer such that exposed portions of said first layer are formed in a scattered manner and on which a group III nitride compound semiconductor does not grow epitaxially;
- forming a third layer made of a group III nitride compound semiconductor by growing epitaxially on said exposed portions of said first layer which are not covered by said second layer and growing epitaxially on the regions which are covered by said second layer in a lateral direction;
- forming a fourth layer on said third layer so as to cover the regions which are not covered by said second layer;
- growing said fourth layer epitaxially on the regions of said third layer which are not covered by said second layer;
- and
- forming a fifth layer made of said group III nitride compound semiconductor by growing epitaxially on the regions which are covered by said fourth layer in lateral direction.
Dependencies are inferred from the claim text.