US 2003/0155585 A1 · Semiconductor device and liquid jet apparatus using the same

Abstract

A semiconductor device having a high source breakdown voltage and high performance and high reliability and a liquid jet apparatus are provided. In a semiconductor device having a switching element for flowing current through a load and a circuit for driving the switching element, respectively formed on the same substrate, the circuit has a source follower transistor for generating a drive voltage to be applied to a control electrode of the switching element, and the source region of the source follower transistor has a first doped region connected to the source electrode and a second doped region having an impurity concentration lower than that of the first doped region, the second doped region forming a pn junction with a semiconductor region forming a channel.

Claims18

Dependent claims

A semiconductor device having a switching element for flowing current through a load and a circuit for driving the switching element, respectively formed on a same substrate, wherein:

said circuit comprises a source follower transistor for generating a drive voltage to be applied to a control electrode of said switching element;
and
a source region of said source follower transistor comprises:
a first doped region connected to a source electrode;
and
a second doped region having an impurity concentration lower than an impurity concentration of said first doped region, said second doped region forming a pn junction with a semiconductor region forming a channel.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/368,579Filed 20 Feb 2003

Priority

JP 2002-04316420 Feb 2002

Published

21 Aug 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10D 30/65
Double-diffused metal-oxide semiconductor [DMOS] FETs: lateral dmos [ldmos] fets
B41J 2/04541
Control methods or devices therefor, e.g. driver circuits, control circuits: specific driving circuit
B41J 2/0458
Control methods or devices therefor, e.g. driver circuits, control circuits: controlling heads based on heating elements forming bubbles
H10D 30/0223
Of FETs having insulated gates [IGFET]: having source and drain regions or source and drain extensions self-aligned to sides of the gate

Semiconductor device and liquid jet apparatus using the same

Life of this patent

Semiconductor device and liquid jet apparatus using the same

Life of this patent

Abstract

Claims18