Back to results
US 2003/0155584 A1Published application
Method of preparing nitrogen containing semiconductor material
AssigneeMidwest Research Institute
InventorsGreg D. Barber, Sarah R. Kurtz
Life of this patent
Estimating the term…
Abstract
A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.
Claims29
A method for growing a nitrogen containing epilayer of a III-V material or alloy, the method comprising:
- providing a substrate;
- and
- forming the epilayer on the substrate utilizing metal organic chemical vapor deposition, wherein the nitrogen source is a nitrogen halide.
A nitride-based semiconductor for a solar cell comprising:
- a substrate;
- and
- an epilayer of nitrogen containing III-V alloy on the substrate, wherein the nitrogen source is obtained from a nitrogen halide.
A semiconductor comprising:
- a wafer;
- a nitrogen containing semiconductor material grown on the wafer;
- and
- means for a nitrogen source.
1 more element
Dependencies are inferred from the claim text.