Gate dielectric structures for integrated circuits and methods for making and using such gate dielectric structures
OwnerMaitreyee Mahajani, Andrew J. Walker +1inventors
InventorsMaitreyee Mahajani, Andrew J. Walker, Igor G. Kouznetsov
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Abstract
Gate dielectric structures for integrated circuits and methods for manufacturing such gate dielectric structures are described. The gate dielectric structures contain gate oxide layers that are provided using a low temperature in-situ steam generation process, thereby providing silicon oxide layers of a very high quality. The gate oxide layers are used primarily in thin film transistors and as the bottom layer in the gate dielectric of silicon-oxide-nitride-oxide-silicon semiconductor devices.
Claims26
A method for making a thin film transistor containing a gate dielectric structure, comprising:
- providing a substrate for the gate dielectric structure;
- and
- providing an oxide layer of the gate oxide structure on the substrate by an in-situ steam generation process.
A method for making a semiconductor device, comprising:
- providing a substrate;
- providing a first oxide layer on the substrate by an in-situ steam generation process;
- providing a nitride layer on the oxide layer;
- and
- providing a second oxide layer on the nitride layer.
A method for making a gate dielectric structure for a thin film transistor or a SONOS device, comprising:
- providing a substrate;
- and
- providing an oxide layer of a gate dielectric structure on the substrate by an in-situ steam generation process.
A method for making a gate dielectric structure for a thin film transistor or a SONOS device, comprising.
- providing a substrate;
- providing an oxide layer of a gate dielectric structure, the oxide layer having a thickness of about 10 to about 200 angstroms;
- and
- annealing the oxide layer in a nitric oxide atmosphere.
A method for making a gate dielectric structure for a thin film transistor or a SONOS device, comprising.
- providing a substrate;
- providing an oxide layer of a gate dielectric structure on the substrate by an in-situ steam generation process performed at a temperature ranging from about 600 to about 1050 degrees Celsius, a pressure ranging from about 100 millitorr to about 760 torr, and for a time sufficient to deposit an oxide thickness of about 10 to about 200 angstroms;
- and
- annealing the oxide layer in a nitric oxide atmosphere.
A thin film transistor containing a gate dielectric structure made by the method comprising:
- providing a substrate for a gate dielectric structure;
- and
- providing an oxide layer of the gate dielectric structure on the substrate by an in-situ steam generation process.
A SONOS semiconductor device made by the method comprising:
- providing a substrate;
- providing a first oxide layer on the substrate by an in-situ steam generation process;
- providing a nitride layer on the oxide layer;
- and
- providing a second oxide layer on the nitride layer.
An integrated circuit containing a thin film transistor with a gate dielectric structure made by the method comprising:
- providing a substrate for the gate dielectric structure;
- and
- providing an oxide layer of the gate dielectric structure on the substrate by an in-situ steam generation process.
An integrated circuit containing a SONOS semiconductor device made by the method comprising:
- providing a substrate;
- providing a first oxide layer on the substrate by an in-situ steam generation process;
- providing a nitride layer on the oxide layer;
- and
- providing a second oxide layer on the nitride layer.
Dependencies are inferred from the claim text.