Heterostructure with rear-face donor doping
AssigneeMicrogan GmbH
InventorsErhard Kohn, Ingo Daumiller, Markus Kamp, Matthias Seyboth
Life of this patent
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Abstract
The invention relates to a heterostructure with a buffer layer or substrate, a channel arranged on the buffer layer or substrate and a capping layer arranged on the channel. Said channel is made from a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and the channel, or the region around the boundary interface between the channel and the capping layer is doped in such a way that any piezo charging which occurs at the respective boundary interface is compensated.
Claims1
A heterostructure with a buffer layer or substrate, with a channel arranged on the buffer layer or on the substrate as well as with a capping layer arranged on the channel, wherein the channel consists of a piezopolar material, characterised in that either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occuring at the respective boundary interface are compensated.
Dependencies are inferred from the claim text.