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US 2003/0155576 A1Published application
Luminescent diode
AssigneeOSRAM GmbH
InventorsGunther Gronninger, Peter Heidborn
Life of this patent
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Abstract
A luminescent diode, based on GaAlAs comprises a window layer (5) with reduced thickness and doped throughout with Si or Sn. The net concentration of the doping is less than 1×1018 cm−3. The degradation of the luminescent diode (1) is thus reduced.
Claims3
A light-emitting diode having a semiconductor chip (1) based on GaAlAs, with a diode layer series (2) amphoterically doped with the aid of silicon, which series has a p-doped anode layer (3) and an n-doped cathode layer (4), and having a window layer (5) based on GaAlAs adjoining the n-doped cathode layer (4), characterized in that
- the thickness of the window layer (5) is between 3 μm and 30 μm;
- and
- that the window layer (5) is doped with the aid of Si or Sn with a net concentration of less than 1×1018 cm−3.
Dependencies are inferred from the claim text.