Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbide
AssigneeGeorgia Tech Research Corporation
InventorWilliam Alan Doolittle
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Abstract
Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalate on III-Nitrides and Silicon Carbide substrates. The semiconductor devices provide good lattice matching characteristics between the substrate and the material that is deposited upon the substrate. The method of forming such semiconductor devices, which is also disclosed, enables fabrication of periodically-poled devices in a manner that is advantageous in comparison to existing technologies.
Claims19
A semiconductor device, comprising:
- a substrate having lithium niobate tantalate (LiNbzTa1−zO3), where 0≦z≦1;
- and
- a group III nitride compound semiconductor layer deposited upon the substrate.
A semiconductor device, comprising:
- a substrate having silicon carbide (SiC);
- and
- a first layer of lithium niobate tantalate (LiNbxTa1−xO3) where 0≦z≦1, formed on the substrate.
A method for producing a semiconductor device, the method comprising:
- providing a SiC substrate containing at least a first step in a generally horizontal first surface;
- and
- depositing a layer of lithium niobate tantalate (LiNbzTa1−zO3) where 0≦z≦1, upon the horizontal first surface, using the step edge to orient the lattice structure of the lithium niobate tantalate (LiNbzTa1−zO3) to be substantially matched to the lattice structure of the SiC substrate.
A method for producing a semiconductor device, the method comprising:
- providing a substrate of lithium niobate tantalate (LiNbzTa1−zO3) where 0≦z≦1;
- and
- depositing a first layer of AlxInyGa1−(x+y)N where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1, upon the substrate at a temperature in the range of about 900° C. to about 1100° C.
A method for producing a semiconductor device, the method comprising:
- providing a substrate of lithium niobate tantalate (LiNbzTa1−zO3) where 0≦z≦1;
- depositing a layer of aluminum upon the substrate at a temperature in the range of about 100° C. to 500° C.;
- and
- thereon providing nitrogen to interact with the layer of aluminum to create a layer of AlN upon the substrate.
A method for forming a poled semiconductor device, the method comprising:
- providing a lithium niobate (LiNbO3) substrate that is uniformly poled in a first direction;
- providing a electric field that traverses a part of the substrate, to create a first area of the substrate that is poled in a second direction;
- removing the electric field;
- and
- depositing a group III nitride compound as on the substrate including the first area of the substrate.
A periodically-poled semiconductor device comprising:
- a periodically-poled substrate of lithium niobate tantalate (LiNbzTa1−zO3) where 0≦z≦1;
- and
- a group III nitride compound semiconductor layer formed on the substrate.
Dependencies are inferred from the claim text.