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US 2003/0155572 A1Published application
Thin film transistor and method for manufacturing thereof
OwnerMin-Koo Han, Cheon-Hong Kim +1inventors
InventorsMin-Koo Han, Cheon-Hong Kim, In-Hyuk Song
Life of this patent
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Abstract
The disclosure is concerned in a thin-film transistor and method of fabricating thereof, forming a heat blocking layer under a channel region of a semiconductor layer. The heat blocking layer, having a lower thermal conductivity, reduces a heat transmission rate along a vertical direction. The channel region is crystallized into a structure of coarse grains through lateral heat transmission.
Claims14
A thin-film transistor comprising:
- an insulated substrate;
- a heat blocking layer, definitively formed on the insulated substrate, for reducing a heat transmission rate along a vertical direction, having a lower thermal conductivity;
- a semiconductor layer covering the heat blocking layer, including a source region, a drain region, and a channel region defined on the heat blocking layer;
- an insulating layer formed on the semiconductor layer, being defined on the channel region;
- and
- a gate electrode formed on the insulating layer, overlapping the channel region.
3 more elements
A method of fabricating a thin-film transistor, comprising the steps of:
- preparing an insulated substrate;
- forming a passivation pattern on a predetermined area of the insulated substrate, the passivation pattern creating a step coverage over the predetermined area;
- sequentially depositing an insulating layer, an amorphous silicon layer, and a capping layer and selectively etching the capping layer, the amorphous silicon layer, and the insulating layer to form an active pattern;
- removing the passivation pattern;
- converting the amorphous silicon defined in the channel region into a polycrystalline silicon layer by means of an annealing process;
- removing the capping layer;
- forming a gate insulation layer and a gate electrode on the polycrystalline silicon layer;
- and
- implanting ions into the source and drain regions with a mask composed of the gate insulation layer and the gate electrode and carrying out an annealing process.
6 more elements
A method of fabricating a thin-film transistor, comprising the steps of:
- preparing an insulated substrate;
- forming a heat blocking layer defined on a predetermined area of the insulated substrate, the heat blocking layer reducing a heat transmission rate along a vertical direction and having a lower thermal conductivity;
- sequentially depositing an insulating layer, an amorphous silicon layer, and a capping layer and selectively etching the capping layer, the amorphous silicon layer, and the insulating layer to form an active pattern;
- converting the amorphous silicon defined in the channel region into a polycrystalline silicon layer by means of an annealing process;
- removing the capping layer;
- forming a gate insulation layer and a gate electrode on the polycrystalline silicon layer;
- and
- implanting ions into the source and drain regions with a mask composed of the gate insulation layer and the gate electrode and carrying out an annealing process.
5 more elements
Dependencies are inferred from the claim text.