Method of manufacturing a semiconductor device and liquid crystal display

A manufacturing method for a semiconductor device including:

• the step of forming a semiconductor film on a substrate;
• the step of forming an insulating film on said semiconductor film;
• the step of forming a conductive film on said insulating film;
• the step of forming a resist film which has a sidewall on said conductive film;
• the step of forming a gate electrode which has a sidewall inside of the position of the sidewall of said resist film by partially removing said conductive film through etching using said resist film as a mask;
• the step of forming a gate insulating film which includes an extended part having a sidewall positioned outside of the sidewall of said gate electrode by partially removing said insulating film through etching using said resist film as a mask;
• the step of forming a high concentration impurity region of source and drain regions in a region of said semiconductor film apart from the sidewall of said extended part by injecting impurities into said semiconductor film using said resist film as a mask;
• the step of removing said resist film;
• and
• the step of forming, after the step of removing said resist film, a low concentration impurity region in source and drain regions, of which the impurity concentration is relatively lower than that of said high concentration impurity region, in regions of said semiconductor film positioned beneath said extended part by injecting impurities into said semiconductor film using said gate electrode as a mask.

A manufacturing method for a semiconductor device including:

• the step of forming a semiconductor film on a substrate;
• the step of forming an insulating film on said semiconductor film;
• the step of forming a conductive film on said insulating film;
• the step of forming a resist film which has a sidewall on said conductive film;
• the step of forming a gate electrode which has a sidewall inside of the position of the sidewall of said resist film by partially removing said conductive film through etching using said resist film as a mask;
• the step of forming a gate insulating film which includes extended parts having a sidewall positioned outside of the sidewall of said gate electrode by partially removing said insulating film through etching using said resist film as a mask;
• the step of removing said resist film;
• the step of forming a high concentration impurity region of source and drain regions in a region of said semiconductor film apart from the sidewall of said extended part by injecting impurities into said semiconductor film using said gate insulating film as a mask;
• the step of forming a low concentration impurity region in source and drain regions, of which the impurity concentration is relatively lower than that of said high concentration impurity regions, in a region of said semiconductor film positioned beneath said extended part by injecting impurities into said semiconductor film using said gate electrode as a mask.