Process for producing semiconductor article using graded epitaxial growth

A process of forming a semiconductor layer, comprising:

• depositing a graded Si1−xGex buffer layer on a first substrate, said Ge concentration x being increased from zero to 1;
• depositing a relaxed Ge layer;
• forming a monocrystalline semiconductor layer including another material whose lattice constant is approximately close to that of Ge;
• introducing ions into said semiconductor layer to define a first heterostructure;
• bonding said first heterostructure to a second substrate to define a second heterostructure;
• splitting said second heterostructure in the region of introduced ions, wherein a top portion of said semiconductor layer remains on said second substrate.

A process of forming a semiconductor structure with a relaxed Si1−zGez layer, comprising:

• depositing a graded Si1−xGex buffer layer on a first substrate, said Ge concentration x being increased from zero to a selected value y, and y being less than 0.2;
• depositing a relaxed Si1−zGez layer, where z is between 0.2 and 0.25;
• introducing ions into said graded Si1−xGex buffer layer to define a first heterostructure;
• bonding said first heterostructure to a second substrate to define a second heterostructure;
• splitting said second heterostructure in the region of introduced ions, wherein the upper portion of first graded Si1−xGex layer and said relaxed Si1−zGez layer remains on said second substrate;
• and
• selectively etching the remaining portion of said graded Si1−xGex layer, wherein said relaxed Si1−zGez layer remains on said second substrate.

A process of forming a semiconductor layer, comprising:

• depositing a graded Si1−xGex buffer layer on a first substrate, said Ge concentration x being increased from zero to a value y;
• depositing a relaxed Si1−yGey layer;
• depositing a strained or defect layer;
• depositing a relaxed layer;
• introducing ions into said strained or defect layer to define a first heterostructure;
• bonding said first heterostructure to a second substrate to define a second heterostructure;
• and
• splitting said second heterostructure in the region of the strained or defect layer, wherein said relaxed layer remains on said second substrate.

A semiconductor structure comprising:

• a first semiconductor substrate;
• a second layer of relaxed Si1−xGex, wherein x=0.1 to 1;
• and
• a third layer comprising at least one of GaAs. AlAs, ZnSe and InGaP, or strained Si1−yGey wherein y≠x.

A semiconductor structure comprising:

• a first substrate comprising monocrystalline silicon substrate;
• a second layer of graded Si1−xGex buffer layer, wherein said Ge concentration x is increased from zero to a value y;
• a third layer of relaxed Si1−yGey;
• a fourth strained or defect layer comprising either a strained Si1−zGez layer with z≠y, or other III-V or II-VI material;
• and
• a fifth relaxed layer comprising either a relaxed Si1−wGew layer where w is close or equal to y, or, when y is equal to 1, at least one of Ge, GaAs, AlAs, ZnSe and InGaP.