Radiation detecting element, radiation image pickup apparatus and radiation detecting method
AssigneeCanon Kabushiki Kaisha
InventorsTakahiro Numai, Masakazu Morishita
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Abstract
The invention is to realize a radiation detecting element of an excellent sensitivity to the incident radiation, and to provide a radiation image pickup apparatus showing a low dark current generating noises and having a satisfactory resolution. A carrier diffusion preventing layer is provided between a charge emitting layer 20 and at least either of a 10 first semiconductor layer and a second semiconductor layer 20 to prevent a carrier diffusion from such either semiconductor layer to the charge emitting layer, thereby reducing the dark current caused by the trap level. It is thus possible to improve the carrier capture efficiency and to realize the radiation detecting element of a high sensitivity.
Claims12
A radiation detecting element comprising:
- a charge emitting layer which absorbs a radiation and emits carriers;
- a first semiconductor layer;
- a second semiconductor layer of a conductive type opposite to that of said first semiconductor layer;
- wherein said charge emitting layer is provided between said first semiconductor layer and said second semiconductor layer;
- and
- a carrier diffusion preventing layer which is provided between said charge emitting layer and at least either of said first semiconductor layer and said second semiconductor layer, thereby preventing a carrier diffusion from said at least either semiconductor layer to said charge emitting layer.
A radiation detecting method which comprises utilizing a radiation detecting element including a charge emitting layer which absorbs a radiation and emits a charge, and which is provided between a first semiconductor layer and a second semiconductor layer of a conductive type opposite to that of the first semiconductor layer, and preventing, by a carrier diffusion preventing layer provided between said charge emitting layer and at least either of said first semiconductor layer and said second semiconductor layer, a carrier diffusion from said at least either semiconductor layer to said charge emitting layer.
A radiation detecting element comprising:
- a charge emitting layer which absorbs a radiation and emits carriers;
- a first semiconductor layer;
- a second semiconductor layer of a conductive type opposite to that of said first semiconductor layer;
- wherein said charge emitting layer is provided between said first semiconductor layer and said second semiconductor layer;
- and
- a third semiconductor layer which is provided between said charge emitting layer and at least either of said first semiconductor layer and said second semiconductor layer, and which forms a pn junction with said either semiconductor layer positioned in a vicinity.
Dependencies are inferred from the claim text.