Laser micromachining and methods and systems of same
OwnerMark C. Huth, Jeffrey R. Pollard +1inventors
InventorsMark C. Huth, Jeffrey R. Pollard, Graeme Scott
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Abstract
The described embodiments relate to methods and systems for laser micromachining a substrate. One exemplary embodiment positions a substrate in an open air environment. The substrate has a thickness defined by opposing first and second surfaces. The substrate can be cut by directing a laser beam at the first surface of the substrate and introducing an assist gas proximate to a region of the substrate contacted by the laser beam.
Claims54
An apparatus for micromachining a substrate comprising:
- an open air region within which substrates can be processed;
- a laser source operably positioned relative to the open air region to generate a laser beam configured to energize substrate material of a substrate positioned within the open air region;
- a gas supply that supplies a halogen containing assist gas into the open air region wherein at least some substrate material can be energized by the laser beam and wherein at least some of the energized substrate material can chemically react with the assist gas to form one or more compounds that can dissipate into the open air region.
An apparatus for micromachining a substrate comprising:
- a laser source operably positioned to generate a laser beam configured to make a cut by removing material from a substrate, wherein the laser beam is configurable to make a cut having an aspect ratio ranging from about 4.5 to about 11.25 and at said range of aspect ratios the laser beam removes greater than or equal to about 9,800,000 cubic microns of substrate material per joule of laser energy.
A method of processing a semiconductor substrate comprising:
- positioning a substrate in an open air region;
- energizing a portion of the substrate to promote removal of at least some substrate material;
- and,
- introducing a halogen containing assist gas proximate to an energized portion of the substrate so that the assist gas chemically reacts with energized substrate material to form, at least in part, one or more volatile compounds.
A method of laser micromachining a substrate comprising:
- positioning a substrate in an open air environment, wherein the substrate has a thickness defined by opposing first and second surfaces;
- and,
- cutting the substrate by directing a laser beam at the first surface of the substrate and introducing an assist gas proximate to a region of the substrate contacted by the laser beam.
A method of processing a substrate comprising:
- positioning a substrate in an open air environment;
- projecting a laser beam at the substrate;
- and,
- directing a halogen containing assist gas toward an area of the substrate contacted by the laser through one or more gas supply nozzles oriented at an angle between about 45 and about 90 degrees relative to a first surface of the substrate.
A method of processing a semiconductor substrate comprising:
- directing a laser beam at a print head substrate positioned in an open air environment;
- introducing a halogen containing assist gas proximate a region of the substrate at which the laser is directed;
- and,
- wherein the laser beam in the presence of the assist gas forms a cut in the substrate having an aspect ratio of at least about 10.
A method of processing a semiconductor substrate comprising:
- positioning a substrate in an open air region for processing;
- and,
- removing material from the substrate by directing a laser beam and a halogen containing assist gas at a portion of the substrate, wherein less than about 1.0 percent of removed substrate material redeposits on the substrate.
A method of laser micromachining a substrate comprising:
- positioning a substrate to be contacted by a laser beam;
- and,
- directing a laser beam at the substrate to form a cut having an aspect ratio in a range from about 4.5 to about 11.25, and wherein said directing removes at least about 9,800,000 cubic microns of substrate material per joule of laser energy for said range of aspect ratios.
A method of processing a substrate comprising:
- positioning a substrate in an open air environment;
- cutting substrate material by directing a laser beam at the substrate and providing an assist gas to an area of the substrate contacted by the laser beam;
- and,
- wherein said cutting occurs in the open air environment, and wherein said cutting process maintains a generally constant cutting rate for the depth of the cut.
A method of cutting features on a semiconductor substrate comprising:
- positioning a substrate in an open air environment;
- supplying an assist gas to an area of the substrate to be cut;
- and,
- cutting a feature into the substrate by directing a laser beam at the substrate in the presence of the assist gas to form a feature having an aspect ratio of greater than or equal to 10.
One or more computer-readable media having computer readable instructions thereon which, when executed by a computer, cause the computer to:
- cause a laser beam to be directed at a substrate positioned in an open air environment;
- and,
- cause an assist gas to be introduced to a region where the laser beam contacts the substrate.
A method of processing a semiconductor substrate comprising:
- means for positioning a substrate in an open air region;
- means for energizing a portion of the substrate to promote removal of at least some substrate material;
- and,
- means for introducing an assist gas proximate an energized portion of the substrate so that the assist gas chemically reacts with energized substrate material to form at least in part one or more volatile compounds.
Dependencies are inferred from the claim text.