Process for electroplating silicon wafers
AssigneeShipley Company, L.L.C.
InventorsTakeshi Miura, Masaru Seita, Yasuo Ota
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Abstract
An electroplating solution comprising copper ions and a complexing agent for the copper ions and has a pH in the range of 4 to 10. The electroplating solution of the present invention makes it possible to fill trenches or via holes on silicon wafers for providing copper wiring with copper in a defect-free manner by preventing the seed layer from dissolving in the plating solution.
Claims4
An electroplating solution comprising copper ions and a complexing agent for the copper ions and having a pH in the range of 4 to 10.
An electroplating process using an electroplating solution comprising copper ions and a completing agent for the copper ions and having a pH in the range of 4 to 10.
A silicon wafer plated with an electroplating solution comprising copper ions and a complexing agent for the copper ions and having a pH in the range of 4 to 10.
Dependencies are inferred from the claim text.