Hafnium silicide target for gate oxide film formation and its production method
AssigneeNippon Mining & Metals Co., Ltd.
InventorsShuichi Irumata, Ryo Suzuki
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Abstract
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film, and the manufacturing method thereof.
Claims8
A hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37.
A hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37 and containing a compatible phase principally including a Hf2Si phase and a Hf phase.
A manufacturing method of a hafnium silicide target for forming a gate oxide film, wherein powder of the composition composed of HfSi0.05-0.37 is synthesized and thereafter hot pressed at 1700° C. to 1830° C.
Dependencies are inferred from the claim text.