Plasma processing apparatus, and electrode plate, electrode supporting body, and shield ring thereof

6) A shield ring characterized in that the shield ring is used in a plasma processing apparatus, comprising:

• a processing chamber;
• a first electrode on which a body to be processed can be placed inside said processing chamber;
• a second electrode which is placed facing opposite said first electrode inside said processing chamber;
• a processing gas supply system which is capable of supplying a processing gas into said processing chamber;
• an exhaust system which is capable of vacuum-exhausting said chamber;
• and a high-frequency electric power supply system which applies high-frequency electric power to at least one of said first and second electrodes to make said processing gas into a plasma and perform prescribed plasma processing on said body to be processed, wherein:
• the shield ring is configured to couple to the periphery of said second electrode inside said processing chamber, and comprises a surface at approximately the same level as the surface of said second electrode facing opposite said body to be processed, and is constituted with silicon.

7) A shield ring characterized in that, the shield ring is used in a plasma processing apparatus, comprising:

• a processing chamber;
• a first electrode on which a body to be processed can be placed inside said processing chamber;
• a second electrode which is placed facing opposite said first electrode inside said processing chamber;
• a processing gas supply system which is capable of supplying a processing gas into said processing chamber;
• an exhaust system which is capable of vacuum-exhausting said processing chamber;
• and a high-frequency electric power supply system which applies high-frequency electric power to at least one of said first and second electrodes to make said processing gas into a plasma and perform prescribed plasma processing on said body to be processed, wherein:
• the shield ring is configured to couple to the periphery of said second electrode inside said processing chamber, and comprises a surface at approximately the same level as the surface of said second electrode facing opposite said body to be processed, and has a resistance value of 1 to 10Ωcm.

8) An electrode plate characterized in that the electrode plate is used in a plasma processing apparatus, comprising:

• a processing chamber;
• a first electrode on which a body to be processed can be placed inside said processing chamber;
• a second electrode which is placed facing opposite said first electrode inside said processing chamber;
• a processing gas supply system which is capable of supplying a processing gas into said processing chamber;
• an exhaust system which is capable of vacuum-exhausting said processing chamber;
• and a high-frequency electric power supply system which applies high-frequency electric power to at least one of said first and second electrodes to make said processing gas into a plasma and perform prescribed plasma processing on said body to be processed, wherein:
• said second electrode comprises an electrode plate, the electrode plate being provided facing opposite said first electrode, being constituted with a conductor or a semiconductor, and having a hollow part which is provided in the center of the surface on the opposite side to that facing the inside of said processing chamber.

11) A plasma processing apparatus comprising:

• a processing chamber;
• a first electrode on which a body to be processed can be placed inside said processing chamber;
• a second electrode which is placed facing opposite said first electrode inside said processing chamber;
• a processing gas supply system which is capable of supplying a processing gas into said processing chamber;
• an exhaust system which is capable of vacuum-exhausting said processing chamber;
• and a high-frequency electric power supply system which applies high-frequency electric power to at least one of said first and second electrodes to make said processing gas into a plasma and perform prescribed plasma processing on said body to be processed, wherein:
• said second electrode comprises an electrode plate which is provided facing opposite said first electrode and is constituted with a conductor or a semiconductor, and a conductive supporting body which is provided on the surface of this electrode plate on the opposite side to that facing the inside of said processing chamber and supports the electrode plate;
• and
• a shield ring which is in roughly the same surface level as said electrode plate is provided on the periphery of said second electrode inside said processing chamber, and the resistance value of said shield ring is lower than the resistance value of said electrode plate.

17) A plasma processing apparatus comprising:

• a processing chamber;
• a first electrode on which a body to be processed can be placed inside said processing chamber;
• a second electrode which is placed facing opposite said first electrode inside said processing chamber;
• a processing gas supply system which is capable of supplying a processing gas into said processing chamber;
• an exhaust system which is capable of vacuum-exhausting said processing chamber;
• and a high-frequency electric power supply system which applies high-frequency electric power to at least one of said first and second electrodes to make said processing gas into a plasma and perform prescribed plasma processing on said body to be processed, wherein:
• said second electrode comprises a supporting body and an electrode plate having a surface facing opposite said body to be processed;
• and
• an insulation film is formed on the surfaces of contact with said electrode plate on said supporting body.

21) A supporting body characterized in that the supporting body is used in a plasma processing apparatus, comprising:

• a processing chamber;
• a first electrode on which a body to be processed can be placed inside said processing chamber;
• a second electrode which is placed facing opposite said first electrode inside said processing chamber;
• a processing gas supply system which is capable of supplying a processing gas into said processing chamber;
• an exhaust system which is capable of vacuum exhausting said processing chamber;
• and a high-frequency electric power supply system which applies high-frequency electric power to at least one of said first and second electrodes to make said processing gas into a plasma and perform prescribed plasma processing on said body to be processed, wherein:
• the supporting body constitutes said second electrode together with an electrode plate having a surface facing opposite said body to be processed;
• and an insulation film is formed on the surface of contact with said electrode plate.

24) An electrode plate characterized in that the electrode plate is used in a plasma processing apparatus, comprising:

• a processing chamber;
• a first electrode on which a body to be processed can be placed inside said processing chamber;
• a second electrode which is placed facing opposite said first electrode inside said processing chamber;
• a processing gas supply system which is capable of supplying a processing gas into said processing chamber;
• an exhaust system which is capable of vacuum-exhausting said processing chamber;
• and a high-frequency electric power supply system which applies high-frequency electric power to at least one of said first and second electrodes to make said processing gas into a plasma and perform prescribed plasma processing on said body to be processed, wherein:
• the electrode plate constitutes said second electrode together with said supporting body;
• the electrode plate having a surface facing opposite said body to be processed;
• and an insulation film for preventing fusion-adhesion of said supporting body and said electrode plate is formed on the surface of contact with said supporting body.

27) A plasma processing apparatus comprising:

• a processing chamber;
• a first electrode on which a body to be processed can be placed inside said processing chamber;
• a second electrode which is placed facing opposite said first electrode inside said processing chamber;
• a processing gas supply system which is capable of supplying a processing gas into said processing chamber;
• an exhaust system which is capable of vacuum-exhausting said processing chamber;
• and a high-frequency electric power supply system which applies high-frequency electric power to at least one of said first and second electrodes to make said processing gas into a plasma and perform prescribed plasma processing on said body to be processed, wherein:
• said second electrode comprises a supporting body and an electrode plate having a surface facing opposite said body to be processed;
• and
• a film for preventing fusion-adhesion of said supporting body and said electrode plate is formed on at least one of the surfaces of contact between said supporting body and said electrode plate.