Plasma processing apparatus and plasma processing method
AssigneeHitachi High-Technologies Corporation
InventorsNaoki Yasui, Masahiro Sumiya, Hitoshi Tamura, Seiichi Watanabe
Life of this patent
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Abstract
The plasma processing apparatus for providing plasma processing to an object 114 placed inside a processing chamber 104 comprises a vacuum chamber 104, a process gas feeder 105 feeding gas into chamber 104, a wafer electrode 115 disposed within chamber 114 for mounting the object 114, a wafer bias power generator 117 supplying bias voltage to electrode 115, and a plasma generating means 112 for generating plasma within chamber 104, wherein said wafer bias power generator includes a clip circuit for clipping either the positive-side voltage or negative-side voltage to a predetermined voltage.
Claims20
A plasma processing apparatus for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, the plasma processing apparatus comprising:
- a vacuum processing chamber;
- a process gas feeding device for feeding process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- a plasma generating means for generating plasma within the vacuum processing chamber;
- and
- a high frequency voltage waveform control circuit for flattening either a positive side voltage or a negative side voltage of the voltage waveform of a high frequency voltage generated to the object to be processed to an arbitrary voltage.
A plasma processing apparatus for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, the plasma processing apparatus comprising:
- a vacuum processing chamber;
- a process gas feeding device for feeding process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- a plasma generating means for generating plasma within the vacuum processing chamber;
- and
- a clip circuit provided to the wafer bias power generator for clipping at least either a positive side voltage or a negative side voltage of a high frequency voltage to a predetermined voltage.
A plasma processing apparatus for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, the plasma processing apparatus comprising:
- a vacuum processing chamber;
- a process gas feeding device for feeding process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- a plasma generating means for generating plasma within the vacuum processing chamber;
- and
- a clip circuit provided to the wafer bias power generator for clipping at least either a positive side voltage or a negative side voltage of a high frequency voltage to a voltage that varies in an inclined manner with time.
A plasma processing apparatus for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, the plasma processing apparatus comprising:
- a vacuum processing chamber;
- a process gas feeding device for feeding process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- a plasma generating means for generating plasma within the vacuum processing chamber, the plasma generating means comprising an antenna disposed within the vacuum processing chamber for supplying high frequency power inside the chamber to generate plasma, and an antenna bias power supply for supplying an antenna bias voltage to the antenna;
- and
- a clip circuit provided to the wafer bias power generator for clipping at least either a positive side voltage or a negative side voltage of a high frequency voltage to a predetermined voltage.
A plasma processing apparatus comprising:
- a processing chamber to which is connected an evacuator for depressurizing the interior of the processing chamber;
- a plasma generating means for generating plasma within the processing chamber;
- a gas feeding device for feeding gas into the processing chamber;
- and
- a means for applying high frequency voltage to an object to be processed so that the waveform of a high frequency voltage generated at the object is substantially rectangular.
A plasma processing method for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, comprising a vacuum processing chamber;
- a process gas feeding device for feeding process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- and a plasma generating means for generating plasma within the vacuum processing chamber;
- wherein
- the plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.
A plasma processing method for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, comprising a vacuum processing chamber;
- a process gas feeding device for feeding process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- and a plasma generating means for generating plasma within the vacuum processing chamber;
- wherein
- the plasma processing method clips at least either a positive side voltage or a negative side voltage of a high frequency voltage of the wafer bias power generator to a predetermined voltage.
A plasma processing method for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, comprising a vacuum processing chamber;
- a process gas feeding device for applying process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- and a plasma generating means for generating plasma within the vacuum processing chamber;
- wherein
- the plasma processing method clips at least either a positive side voltage or a negative side voltage of a high frequency voltage of the wafer bias power generator to a voltage that varies in an inclined manner with time.
A plasma processing method utilizing a plasma processing apparatus comprising a processing chamber to which is connected an evacuator for depressurizing the interior of the processing chamber;
- a plasma generating means for generating plasma within the processing chamber;
- a means for applying high frequency voltage to an object to be processed;
- and a gas feeding device for feeding gas into the processing chamber;
- wherein
- the plasma processing method applies high frequency voltage to the object to be processed so that a high frequency voltage waveform generated at the object is substantially rectangular.
Dependencies are inferred from the claim text.