Scanning atom probe and analysis method utilizing scanning atom probe
AssigneeKanazawa Institute of Technology
InventorOsamu Nishikawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeKanazawa Institute of Technology
InventorOsamu Nishikawa
Estimating the term…
In a scanning atom probe (100), a surface topography of a specimen (3) is firstly analyzed by a surface topography analyzing unit (20). In the next place, an extraction electrode (5) is aligned to a desired area to be analyzed of a specimen surface. In case of analyzing electronic state of the area to be analyzed, negative bias voltage is impressed onto the specimen (3) from a direct current high voltage supply (2) and field emitted electrons are detected by a screen (9). In case of analyzing atomic arrangement and composition of the area to be analyzed, positive voltage is impressed onto the specimen (3) from the direct current high voltage supply (2) and a pulse generator (1) and positive ions generated by field evaporation are detected by a position sensitive ion detector (11) or a relfectron type mass analyzer (13).
An analysis apparatus characterized in that it comprises:
An analysis method characterized in that it comprises:
Dependencies are inferred from the claim text.