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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKun-Tzu Lin, Jung-Huang Peng, Yu-Chih Huang, Chu-Song Shih
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An apparatus for the real-time monitoring and control of a wafer temperature in a semiconductor process chamber, such as a plasma assisted deposition chamber or etch chamber, is provided. The apparatus is constructed by a wafer platform, a heat exchanger for flowing a heat exchanging medium into the wafer platform, an optical sensor for sensing the temperature of a wafer positioned on the wafer platform, and a controller for receiving a signal from the optical sensor, comparing to a pre-stored value and sending a signal to the heat exchanger to increase or decrease a flow of the heat exchanging medium. In another embodiment, a plurality of thermoelectric cooling modules is utilized for enhancing the temperature control capability of the heat exchanger by embedding the modules in the wafer platform, such as an electrostatic chuck.
An apparatus for the real-time monitoring and control of a wafer temperature comprising:
An apparatus for the real-time monitoring and control of a wafer temperature comprising:
An apparatus for controlling the temperature of a wafer situated on a wafer platform in a process machine comprising:
Dependencies are inferred from the claim text.