Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members
AssigneeNGK Insulators, Ltd.
InventorsYuji Katsuda, Jun Yoshikawa
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AssigneeNGK Insulators, Ltd.
InventorsYuji Katsuda, Jun Yoshikawa
Estimating the term…
An object of the present invention is to preserve the characteristic properties of an aluminum nitride ceramics and reduce its volume resistivity. An aluminum nitride ceramics contains boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and has a volume resistivity at room temperature of not higher than 1×1012 Ω·cm. Alternatively, an aluminum ceramics comprises aluminum nitride and intergranular phases mainly consisting of boron nitride constituting a conducting path and has a volume resistivity at room temperature of 1×1012 Ω·cm. Such ceramics may be obtained by holding a mixture at least containing aluminum nitride and boron carbide at a holding temperature not lower than 1400° C. and not higher than 1800 ° C. and then sintered at a maximum temperature higher than the holding temperature.
An aluminum nitride ceramics containing boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and having a volume resistivity at room temperature of not higher than 1×1012 Ω·cm.
An aluminum nitride ceramics comprising aluminum nitride and intergranular phases mainly consisting of boron nitride constituting a conductive path and having a volume resistivity at room temperature of not higher than 1×1012 Ω·cm.
An aluminum nitride ceramics comprising aluminum nitride and intergranular phases mainly consisting of boron nitride and having a volume resistivity at room temperature of not higher than 1×1012 Ω·cm, wherein 004 diffraction peak of said intergranular phase has a spacing d004 of not lower than 1.6650 angstrom.
An aluminum nitride ceramics being produced by sintering a mixture at least containing aluminum nitride and boron carbide and having a volume resistivity at room temperature of not higher than 1×1012 Ω·cm.
A conductive member having a volume resistivity at room temperature of not higher than 1×106 Ω·cm and composed of an aluminum nitride ceramics containing aluminum nitride in a content of not lower than 80 weight percent.
Dependencies are inferred from the claim text.