Methods for conditioning surfaces of polishing pads after chemical-mechanical polishing, and apparatuses for conditioning surfaces of polishing pads

A method for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface, comprising:

• providing an apparatus which includes a steam outlet port proximate a conditioning stone;
• positioning the pad with the pad surface against the conditioning stone and displacing the pad relative to the condition stone to rub the pad surface with the condition stone;
• and
• flowing steam through the outlet port and across the pad surface as the pad surface is rubbed with the conditioning stone.

A method for chemical-mechanical polishing of a semiconductor substrate with a polishing pad surface and reconditioning the pad surface, comprising:

• providing a semiconductor substrate having a surface which is to be chemical-mechanical polished;
• providing a polishing pad proximate the semiconductor substrate surface and utilizing a surface of the polishing pad to chemical-mechanical polish the semiconductor substrate surface;
• providing an apparatus which includes a steam outlet port proximate a conditioning stone;
• positioning the pad with the pad surface against the conditioning stone and displacing the pad relative to the condition stone to rub the pad surface with the condition stone;
• and
• flowing steam through the outlet port and across the pad surface as the pad surface is rubbed with the conditioning stone.

An apparatus for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface, comprising:

• a conditioning stone;
• and
• a steam outlet port proximate the conditioning stone;
• the steam outlet port being configured to jet steam onto the pad surface during the conditioning of the pad surface.