Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates

A semiconductor structure comprising:

• a substrate;
• an insulator layer having carbon-graded layers above said substrate;
• and
• stabilization interface areas between said carbon-graded layers,
• wherein a concentration of carbon increases in each successive carbon-graded layer above said substrate.

A method of forming a semiconductor structure having an insulating layer comprising:

• forming a substrate;
• depositing a layer containing a concentration of carbon on said substrate;
• and
• repeating said depositing process forming successive carbon-graded layers over one another using increasing concentrations of carbon to form said insulator layer.

A method of forming a semiconductor structure having an insulating layer comprising:

• forming a substrate;
• depositing a layer containing a concentration of carbon on said substrate;
• repeating said depositing process forming successive carbon-graded layers over one another using increasing concentrations of carbon to form said insulator layer;
• and
• forming interfaces by stabilization steps between said depositing of said carbon-graded layers.