Method for reducing fluorine induced defects on a bonding pad surface
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiann-Tyng Tzeng, Jih-Ren Tsai, Michael Wu, Ching-Wen Cho
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Abstract
A method for reducing a fluorine contamination level on a semiconductor wafer process surface including providing a semiconductor wafer surface having a process surface including an uppermost polyimide containing layer; reactive ion etching the process surface to include exposure of the process surface to a hydrofluorocarbon containing plasma; and heating the process surface according to a temperature profile to reduce a fluorine contamination level.
Claims20
A method for reducing a fluorine contamination level on a semiconductor wafer process surface comprising the steps of:
- providing a semiconductor wafer surface having a process surface including an uppermost polyimide containing layer;
- reactive ion etching the process surface to include exposure of the process surface to a hydrofluorocarbon containing plasma;
- and
- heating the process surface according to a temperature profile to reduce a fluorine contamination level.
A method for reducing fluorine contamination on a polyimide surface and defect formation on a bonding pad surface comprising the steps of:
- providing a semiconductor wafer surface having a process surface including a polyimide containing layer forming an uppermost surface of the process surface;
- photolithographically patterning and developing the polyimide containing layer to reveal an underlying passivation layer;
- reactive ion etching through the passivation layer with a hydrofluorocarbon containing plasma to reveal bonding pad surfaces;
- and
- heating the process surface including the polyimide containing layer according to a temperature profile to reduce a fluorine contamination level.
Dependencies are inferred from the claim text.