Plasma etching uniformity control
AssigneeIntel Corporation
InventorsY. Long He, Albert Kwok, Tsukasa Abe, Han-Ming Wu
Life of this patent
Estimating the term…
Abstract
Plasma etching is controlled utilizing two etchant gases to form a plasma so as to obtain controlled (e.g., uniform) etch rate across a wafer. One etchant gas forms a positive plasma, which is the dominant plasma. The other etchant gas forms a negative plasma, which is the secondary plasma. The ratio of dominant plasma to the secondary plasma can be adjusted such that ion densities are uniform across the wafer, resulting in uniform etch rate over the wafer.
Claims26
A method of plasma etching, comprising:
- providing a substrate material;
- providing a gas for generating a plasma, the gas including a first component and a second component selected such that varying the ratio of the first component to the second component varies the rate of etching of one location of the substrate relative to another location on the substrate;
- and
- generating the plasma.
A method of plasma etching, comprising:
- providing a substrate material,
- providing a gas for generating a plasma, the gas including a first component comprising molecules CxFy, x and y being integers, and a second component selected from the group consisting of silicon fluoride, phosphorous fluoride, and sulfuric fluoride;
- and
- generating the plasma.
A method of controlling a plasma, comprising:
- providing a chamber;
- providing a gas for generating a plasma in the chamber, the gas including a first component and a second component, wherein the first component produces a positive ion plasma and the second component produces a negative ion plasma;
- generating the plasma;
- and
- controlling the ion distribution within the chamber by selecting the amount of the first component and the second component.
An apparatus for etching a substrate material comprising:
- a chamber;
- a support located within the chamber to support the substrate material;
- a high frequency energy source;
- a first gas supply providing a first gas, the first etchant gas comprising CxFy molecules, x and y being integers;
- a first inlet for introducing the first gas into the chamber to form a first plasma gas when energized by the high frequency energy source;
- a second gas supply providing a second gas, the second etchant gas comprising SpFq molecules, p and q being integers;
- and
- a second inlet for introducing the second gas into the chamber to form a second plasma gas when energized by the high frequency energy source.
Dependencies are inferred from the claim text.