Method and system of forming semiconductor wiring, method and system of fabrication semiconductor device, and wafer
AssigneeShinmaywa Industries, Ltd.
InventorsMasao Marunaka, Toshiya Doi, Kouichi Nose, Shirou Takigawa, Kiyoshi Otake
Life of this patent
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Abstract
A vacuum chamber the inside of which can be maintained in a substantially vacuum condition is used; a wafer in which a semiconductor wiring film is to be formed is held by a wafer substrate holder disposed in the vacuum chamber; the material of the semiconductor wiring film is evaporated by an evaporation source disposed in the vacuum chamber; and a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode is supplied from a high frequency power source.
Claims36
A semiconductor wiring forming system comprising:
- a vacuum chamber the inside of which can be maintained in a substantially vacuum condition;
- a substrate holder disposed in the vacuum chamber, for holding a wafer on which a semiconductor wiring film is to be formed;
- an evaporation source disposed in the vacuum chamber, for evaporating the material of the semiconductor wiring film;
- and
- a high frequency power source for supplying a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode.
A semiconductor wiring forming method, wherein
- a vacuum chamber the inside of which can be maintained in a substantially vacuum condition is used;
- a wafer on which a semiconductor wiring film is to be formed is held by a wafer substrate holder disposed in the vacuum chamber;
- the material of the semiconductor wiring film is evaporated by an evaporation source disposed in the vacuum chamber;
- and
- a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode, is supplied from a high frequency power source.
A wafer wherein grooves having a width of about 0.35 μm and depth of about 1 μm are formed on the surface of the wafer or on the surface of a layer formed on the wafer and substantially 100 per cent of the grooves is filled with a wiring film material comprised of copper by a dry process.
Dependencies are inferred from the claim text.