US 2003/0153176 A1 · Interconnection structure and interconnection structure formation method

Abstract

A Cu interconnection is formed above a semiconductor substrate. An SIC:H film and a silicon nitride film covering the Cu interconnection are formed in this order as protective films of the Cu interconnection. An interlayer insulating film is formed on the silicon nitride film. A via hole is formed in the interlayer insulating film with using the silicon nitride film as a stopper. An upper layer portion of the interlayer insulating film is processed in a portion aligned with the via hole. The silicon nitride film and the SiC:H film are so etched as to be aligned with the via hole. A Cu film is buried in the via hole. This interconnection structure formation method can reliably prevent Cu diffusion from the Cu interconnection to the interlayer insulating film and prevent peeling of the Cu interconnection. In this method, high oxidation resistance is obtained.

Claims17

Dependent claims

An interconnection structure formation method comprising:

first step of forming a lower interconnection above a substrate;
second step of forming a first protective film made of silicon carbide so as to cover the surface of said lower interconnection;
third step of forming a second protective film made of an insulating material on said first protective film;
fourth step of forming an interlayer insulating film on said second protective film;
fifth step of forming a hole in said interlayer insulating film with using said second protective film as a stopper;
sixth step of processing an upper layer portion of said interlayer insulating film in a portion aligned with said hole;
seventh step of processing said second and first protective films so as to be aligned with said hole, thereby exposing the surface of said lower interconnection to said hole;
and
eighth step of burying a conductive material in at least said hole.

6 more elements

Dependencies are inferred from the claim text.

Interconnection structure and interconnection structure formation method

Life of this patent

Interconnection structure and interconnection structure formation method

Life of this patent

Abstract

Claims17