Laser processing apparatus and laser processing process
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHideto Ohnuma, Nobuhiro Tanaka, Hiroki Adachi
Life of this patent
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Abstract
A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
Claims42
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate having an insulating surface;
- pattering the semiconductor layer;
- and
- irradiating the semiconductor layer with a laser beam while moving an irradiated region of the semiconductor layer in one direction with respect to the laser beam,
- wherein the irradiated region overlaps with a neighboring irradiated region of the semiconductor layer in a predetermined proportion.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate having an insulating surface;
- pattering the semiconductor layer;
- and
- irradiating the semiconductor layer with a laser beam having a rectangular cross section having a width and a length while moving an irradiated region of the semiconductor layer in a direction of the width, the width being smaller than the length,
- wherein the irradiated region overlaps with a neighboring irradiated region of the semiconductor layer in a predetermined proportion.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate having an insulating surface;
- pattering the semiconductor layer;
- and
- irradiating the semiconductor layer with a pulse laser beam having a cross section having a width and a length while moving the substrate in a direction of the width per pulse by a distance smaller than the width,
- wherein one irradiated region of the semiconductor layer overlaps with a neighboring irradiated region of the semiconductor layer in a predetermined proportion.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate having an insulating surface;
- pattering the semiconductor layer;
- and
- irradiating the semiconductor layer with a pulse laser beam having a rectangular cross section having a width and a length and elongated in a direction of the length while moving the substrate in a direction of the width per pulse by a distance smaller than the width,
- wherein one irradiated region of the semiconductor layer overlaps with a neighboring irradiated region of the semiconductor layer in a predetermined proportion.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate having an insulating surface;
- pattering the semiconductor layer;
- and
- irradiating the semiconductor layer with a YAG laser beam having a cross section having a width and a length while moving an irradiated region of the semiconductor layer in a direction of the width,
- wherein the irradiated region overlaps with a neighboring irradiated region of the semiconductor layer in a predetermined proportion.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer over a substrate having an insulating surface;
- pattering the semiconductor layer;
- and
- irradiating the semiconductor layer with a YAG laser beam having a rectangular cross section having a width and a length and elongated in a direction of the length while moving an irradiated region of the semiconductor layer in a direction of the width,
- wherein the irradiated region overlaps with a neighboring irradiated region of the semiconductor layer in a predetermined proportion.
Dependencies are inferred from the claim text.