Support-integrated donor wafers for repeated thin donor layer separation
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsFabrice Letertre, Thibaut Maurice
Life of this patent
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Abstract
Processes that may be used in producing electronic, opotoelectronic, or optical components may be provided. The processes may involve preparing a reusable donor wafer for donating a thin layer of semiconductor material by assembling a donor layer of a semiconductor material having a thickness of plural thin layers onto a support layer of. The semiconductor material for the support layer may be selected to be less precious or to have a lower quality than the donor layer. The support layer may have sufficient mechanical characteristics for supporting the donor layer during desired semiconductor processing treatments.
Claims23
A process for repeated treatment of wafers, comprising preparing a reusable donor wafer for donating a thin layer of semiconductor material by assembling a donor layer of a monocrystalline semiconductor material having a thickness of plural thin layers onto a support layer of a non-monocrystalline semiconductor material.
An electronic, opotoelectronic, or optical component comprising a reusable donor wafer that includes a donor layer of a monocrystalline semiconductor material having a thickness of plural thin layers and a support layer of a non-monocrystalline semiconductor material.
Dependencies are inferred from the claim text.