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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMasatake Nakano, Isao Yokokawa, Kiyoshi Mitani
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The present invention provides a method for producing a bonded wafer comprising at least an ion implantation process where at least either hydrogen ions or rare gas ions are implanted into a first wafer from its surface to form a micro bubble layer (implanted layer) in the first wafer, a bonding process where the surface subjected to the ion implantation of the first wafer is bonded to a surface of a second wafer, and a delamination process where the first wafer is delaminated at the micro bubble layer, wherein the ion implantation process is performed in divided multiple steps, and a bonded wafer. Thus, there are provided a method for producing a bonded wafer, which is for reducing micro-voids generated in the ion implantation and delamination method and a bonded wafer free from micro-voids.
A method for producing a bonded wafer comprising at least an ion implantation process where at least either hydrogen ions or rare gas ions are implanted into a first wafer from its surface to form a micro bubble layer (implanted layer) in the first wafer, a bonding process where the surface subjected to the ion implantation of the first wafer is bonded to a surface of a second wafer, and a delamination process where the first wafer is delaminated at the micro bubble layer, wherein the ion implantation process is performed in divided multiple steps.
A bonded wafer produced by bonding a second wafer to a first wafer having a micro bubble layer (implanted layer) into which at least either hydrogen ions or rare gas ions are implanted on its ion-implanted surface and delaminating them at the micro bubble layer of the first wafer, wherein the bonded wafer is free from micro-voids generated by particles adhering to the ion-implanted surface.
Dependencies are inferred from the claim text.