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US 2003/0153157 A1Published application
Low energy ion implantation into SiGe
OwnerMajeed A. Foad, Norma B. Rileyinventors
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Abstract
A method comprising introducing a crystalline film with silicon germanium over the surface of a semiconductor substrate, and introducing a junction region by an implant of a dopant into the crystalline film. An apparatus comprising a semiconductor substrate having an active region and comprising a crystalline film comprising germanium in the active region, a gate electrode overlying the crystalline layer, and junction regions formed in the substrate adjacent opposite sides of the gate electrode.
Claims17
A method comprising:
- forming a crystalline film of silicon germanium over the surface of a portion of a semiconductor substrate, the portion comprising a first conductivity type;
- and
- forming a junction region by an implant of a dopant of a second conductivity type into the crystalline film.
A method of forming a transistor device comprising:
- forming a crystalline film of silicon germanium in a surface of the semiconductor substrate;
- forming a first junction region into the crystalline film substrate proximally adjacent an area for a gate electrode on the semiconductor substrate;
- and
- forming a second junction region into the crystalline film,
- wherein the second junction region introduced to a depth that is greater than the first depth and in an area at a greater distance to the area for the gate electrode than the first junction region.
2 more elements
An apparatus comprising:
- a semiconductor substrate having an active region and comprising a crystalline film comprising germanium in the active region;
- a gate electrode overlying the crystalline layer;
- and
- junction regions formed in the substrate adjacent opposite sides of the gate electrode.
1 more element
Dependencies are inferred from the claim text.