Memory device with quantum dot and method for manufacturing the same

A method for manufacturing a memory device, comprising;

• forming a source region and a drain region in the surface of the substrate, which are separated from each other by a predetermined interval;
• depositing a layer for storing an electron between the source region and the drain region;
• forming a porous storage layer for forming a plurality of holes by oxidizing the storage layer;
• depositing a material for storing electrons inside the holes;
• etching and planarizing the porous storage layer;
• forming an insulating layer on the planarized surface of the storage layer;
• and
• forming a control gate on the insulating layer.

A method for manufacturing a memory device, comprising;

• forming a storage layer on a substrate;
• forming a porous storage layer by forming a plurality of holes by oxidizing the storage layer;
• depositing a material for storing electrons inside the holes;
• etching and planarizing the porous storage layer;
• forming an insulating layer on the surface of the planarized storage layer;
• forming a control gate on the insulating layer;
• and
• forming a source region and a drain region on both sides of the porous storage layer on the surface of the substrate, which are separated by predetermined intervals.