Selective deposition of undoped silicon film seeded in chlorine and hydride gas for a stacked capacitor

A method for forming an integrated circuit, comprising:

• forming at least one transistor within a substrate;
• forming at least one capacitor in an insulative layer supported by the substrate, comprising:
• forming a first electrode comprising:
• removing a first portion of the insulator layer to form an opening;
• forming a first layer of undoped silicon in the opening, the first layer depositing on a bottom interface and a sidewall interface in the opening;
• forming a layer of doped silicon on the first layer of undoped silicon;
• forming a second layer of undoped silicon on the doped layer of silicon;
• removing selected portions of the insulative layer to expose at least a portion of the sidewall interface of the first layer of undoped silicon;
• seeding the first and second undoped silicon layers using an environment that includes a hydride gas and a seeding species to form a seeded silicon coating;
• preventing silicon buildup on the insulative layer during seeding by adding chlorine to the environment after stabilization of the hydride flow;
• annealing the seeded silicon layers to convert the first and second undoped silicon layers to HSG;
• forming a second electrode separated from the first electrode by a dielectric region;
• and
• coupling at least one capacitor to at least one transistor.

A method for forming an integrated circuit, comprising:

• forming at least one transistor within a substrate;
• forming at least one capacitor in an insulative layer supported by the substrate, comprising:
• forming a first electrode comprising:
• providing an exposed silicon surface adjacent to an exposed insulative surface;
• seeding the exposed silicon surface with an environment that includes a hydride gas and a seeding species to form a seeded silicon coating;
• preventing silicon buildup on the insulative surface during seeding by adding chlorine to the environment;
• annealing the seeded silicon surface to convert the seeded silicon surface to HSG;
• forming a second electrode separated from the first electrode by a dielectric region;
• and
• coupling at least one capacitor to at least one transistor.

A method of forming HSG layers separated by insulative material on a substrate, comprising:

• forming HSG precursor layers of amorphous silicon;
• seeding a chemical species onto the layers of amorphous silicon at a low temperature and low pressure wherein the seeding is performed in the presence of a hydride gas and HCl which prevents build-up of silicon on the insulative material;
• and
• converting the HSG precursor layers to HSG layers.

A method for forming a memory device comprising:

• forming an access transistor;
• forming a storage capacitor coupled to the access transistor, including:
• forming a first electrode, including:
• providing an exposed silicon surface adjacent to an exposed insulative surface;
• seeding the exposed silicon surface with an environment that includes a hydride gas and a germanium seeding species to form a seeded silicon coating;
• preventing silicon buildup on the insulative surface during seeding by adding chlorine to the environment;
• annealing the seeded silicon surface to convert the seeded silicon surface to HSG;
• and
• forming a second electrode separated from the first electrode by a dielectric region.

A method for forming a memory device comprising:

• forming an access transistor;
• forming a storage capacitor coupled to the access transistor, including:
• forming a first electrode, including:
• providing an exposed silicon surface adjacent to an exposed insulative surface;
• seeding the exposed silicon surface with an environment that includes a hydride gas and a germanium seeding species to form a seeded silicon coating;
• preventing silicon buildup on the insulative surface during seeding by adding HCl to the environment;
• annealing the seeded silicon surface to convert the seeded silicon surface to HSG;
• and
• forming a second electrode separated from the first electrode by a dielectric region.

A method for forming a memory device comprising:

• forming an access transistor;
• forming a storage capacitor coupled to the access transistor, including:
• forming a first electrode, including:
• providing an exposed silicon surface adjacent to an exposed insulative surface;
• seeding the exposed silicon surface with an environment that includes a hydride gas and a germanium seeding species to form a seeded silicon coating;
• preventing silicon buildup on the insulative surface during seeding by adding C12 to the environment;
• annealing the seeded silicon surface to convert the seeded silicon surface to HSG;
• and
• forming a second electrode separated from the first electrode by a dielectric region.