Semiconductor device having element isolation structure
AssigneeDenso Corporation
InventorsNobumasa Ueda, Shoji Mizuno
Life of this patent
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Abstract
When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating. film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.
Claims8
A method for manufacturing a semiconductor device, comprising:
- preparing a wafer having a principal surface and a back surface;
- forming a trench in the wafer from the principal surface, the trench dividing a surface portion of the wafer into first and second element formation regions;
- filling the trench with an insulating layer;
- forming a first and second elements in the first and second element formation regions, respectively;
- and
- thinning a thickness of the wafer from the back surface without attaching a supporting substrate thereto so as to expose the insulating layer at the back surface after the first and second elements are formed.
A method for manufacturing a semiconductor device, comprising:
- preparing a wafer having a principal surface and a back surface;
- forming a trench in the wafer from the principal surface;
- filling the trench with an insulating layer;
- forming semiconductor elements in respective regions isolated from each other with the trench in the wafer;
- thinning a thickness of the wafer from the back surface without attaching a supporting substrate thereto so that the insulating layer filling the trench is exposed on both the principal surface and the back surface of the wafer after the semiconductor elements are formed;
- and
- cutting a cutting portion of the wafer other than a region where the trench is formed to divide the wafer into a plurality of chips.
Dependencies are inferred from the claim text.