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AssigneeTexas Instruments Incorporated
InventorsKiyoshi Yajima, Mutsumi Masumoto, Chihiro Hatano, Kimitaka Nishio, Noriyuki Kirikae
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A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 μm or thicker. A semiconductor device made by this method and a wafer for use with this method.
A semiconductor package production method characterized as containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed in order to obtain a wafer with a bond layer, a step in which a dicing tape is pasted onto the bond layer side of the wafer with the bond layer, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded;
Dependencies are inferred from the claim text.