Polysilicon fet built on silicon carbide diode substrate
AssigneeInternational Rectifier Corporation
InventorSrikant Sridevan
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Abstract
A polysilicon FET is built atop a SiC diode to form a MOSgated device. The polysilicon FET includes an invertible layer of polysilicon atop the surface of a SiC diode which has spaced diode diffusions. A MOSgate is formed on the polysilicon layer and the energization of the gate causes an inversion channel in the invertible layer to form a majority carrier conduction path from a top source electrode to a bottom drain electrode. Forward voltage is blocked in part by the polysilicon FET and in larger part by the depletion of the silicon carbide area between the spaced diode diffusions.
Claims4
The process for manufacture of MOSgated device comprising the formation of spaced diffusions in the top surface of a SiC substrate;
- forming a layer of polysilicon over said top surface;
- forming a MOSgate structure in said layer of polysilicon and aligned over the space between said diffusions;
- and forming a source electrode connected to said spaced diffusions.
Dependencies are inferred from the claim text.