Optical integrated circuit device, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same

An optical integrated circuit device fabrication method, comprising:

• a step for forming an active layer on an upper surface of a semiconductor substrate using a MOCVD method;
• a step for forming a first current disconnection layer on an upper surface of the semiconductor substrate a both sides of the active layer using the MOCVD method;
• a step for selectively growing a second current disconnection later on an upper surface of the first current disconnection layer;
• a step for forming a convex portion having a taper shaped lateral surface on a part of an upper portion of the active layer and a part of an upper surface of the second current disconnection layer;
• a step for forming a protection film on a lateral surface of the convex portion and an upper surface of the second current disconnection layer;
• a step for forming a first electrode on an upper surface of the convex portion;
• and
• a step for forming a second electrode on a lower surface of the semiconductor substrate.

An optical communication transmission and receiving apparatus module, comprising:

• an optical integrated circuit device including:
• a semiconductor substrate;
• an active layer formed on an upper surface of the semiconductor substrate;
• a first current disconnection layer formed on an upper surface of the semiconductor substrate at both sides of the active layer;
• a second current disconnection layer formed on an upper surface of the first current disconnection layer;
• a convex portion formed on an upper portion of the active layer and an upper surface of the second current disconnection layer and having a taper shape at a lateral surface of the same;
• a protection film formed on a lateral surface of the convex portion and an upper surface of the second current disconnection layer;
• a first electrode formed on an upper surface of the convex portion;
• and
• a second electrode formed on a lower surface of the semiconductor substrate;
• a mounting apparatus having a concave portion having a reverse taper shaped lateral wall profile at the upper center portion;
• a third electrode having a part embedded in the mounting apparatus and another part extended on a lower surface of the concave portion and
• a fourth electrode formed on an edge upper surface of the mounting apparatus, wherein said third electrode formed on a lower surface of the concave portion of the mounting apparatus and a first electrode of the optical integrated circuit device contact each other.