Micromachined device having electrically isolated components and a method for making the same
AssigneeGeorgia Tech Research Corporation
InventorsMark G. Allen, Charles C. Chung
Life of this patent
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Abstract
A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.
Claims35
A micromachined electromechanical device, comprising:
- a substrate having a doped region formed by thermomigrating a dopant through said substrate, said substrate having a first region and a second region, said first region electrically isolated from said second region by said doped region,
- wherein said first region is capable of moving with respect to said second region in response to a voltage difference applied across said first and second regions.
A micromachined electromechanical device, comprising:
- a substrate having a doped region formed by thermomigrating a dopant through said substrate, said substrate having a first region and a second region, said first region electrically isolated from said second region by said doped region, said substrate having a first surface and a second surface that is opposite of said first surface, said substrate having a gap separating said first region from said second region and extending from said first surface to said second surface.
A micromachined electromechanical device, comprising:
- a substrate having a doped region formed by thermomigrating a dopant through said substrate, said substrate having a first region and a second region, said first region separated from said second region by said doped region, said doped region having sufficient electrical properties for restricting current from flowing between said first and second regions when a voltage difference applied across said first and second regions is sufficient for moving said first region with respect to said second region.
A semiconductive structure having a first portion and a second portion, said first portion separated from said second portion by a gap in said substrate, said first portion capable of moving with respect to said second portion, said first portion and said second portion electrically isolated from each other by a doped region of said structure, said doped region having electrical properties for restricting current from flowing between said first portion and said second portion when a voltage difference applied across said first portion and said second portion is sufficient for moving said first portion with respect to said second portion.
A semiconductive structure having a first surface and a second surface, said first surface opposite of said second surface and separated from said second surface by a distance of at least approximately 25 microns, said structure having a doped region passing through said structure from said first surface to said second surface, said doped region residing between a first portion of said structure and a second portion of said structure, wherein said doped region electrically isolates said first portion from said second portion.
A method, comprising the steps of:
- providing a substrate having a doped region formed by thermomigrating a dopant through said substrate, said substrate having a first region and a second region, said first region electrically isolated from said second region by said doped region;
- and
- simultaneously applying a first voltage to said first region and a second voltage to said second region such that said first region moves with respect to said second region.
A method, comprising the steps of:
- providing a substrate having a doped region formed by thermomigrating a dopant through said substrate, said substrate having a first region and a second region, said first region separated from said second region by said doped region and a gap within said substrate;
- and
- simultaneously applying a first voltage to said first region and a second voltage to said second region thereby causing said first region to move with respect to said second region,
- wherein said doped region has sufficient electrical properties for restricting current from flowing between said first and second regions when said first voltage is applied to said first region and said second voltage is applied to said second region.
Dependencies are inferred from the claim text.