Method for manufacturing light-emitting device using a group lll nitride compound semiconductor

A method for manufacturing a light-emitting device using group III nitride compound semiconductors having a quantum well structure on a substrate, comprising steps of:

• forming a well layer at a first crystal growth rate and at a first deposition temperature, the well layer comprising a first group III nitride compound semiconductor layer;
• forming a cap layer on said well layer at a second crystal growth rate and at a second deposition temperature, the cap layer comprising a second group III nitride compound semiconductor layer;
• wherein the difference between the first deposition temperature and the second deposition temperature is less than 50° C.,
• and further wherein the second crystal growth rate is faster than the first crystal growth rate;
• increasing the temperature of the substrate, the well layer and the cap layer from an initial temperature to a third deposition temperature, the third deposition temperature being greater than the second deposition temperature;
• removing at least a portion of the cap layer by decomposition as the temperature of the cap layer increases from the initial temperature to the third deposition temperature;
• and
• forming a third group III nitride compound semiconductor layer at the third deposition temperature.