Drive circuit of active matrix device and manufacturing method therefor

A method of manufacturing an active matrix device having a plurality of active matrix elements and at least one driver circuit electrically connected to said active matrix elements through a plurality of signal lines extending substantially in a first direction, said driver circuit including buffer circuits connected to said signal lines, said method comprising the steps of:

• forming a semiconductor film over a substrate;
• irradiating said semiconductor film with a laser beam to crystallize said semiconductor film wherein said laser beam has a cross section which is elongated in said first direction;
• and
• forming said active matrix elements and said buffer circuits by using the crystallized semiconductor film as an active layer,
• wherein each of said buffer circuits includes at least first and second circuits, one of said circuits of one of the buffer circuits is positioned in the same line along said first direction as one of said circuits of another one of the buffer circuits.

A method of manufacturing an active matrix device having a plurality of pixels and at least one driver circuit for driving said plurality of pixels through a plurality of signal lines extending substantially in a first direction, said driver circuit including buffer circuits connected to said signal lines, said method comprising the steps of:

• forming a semiconductor film over a substrate;
• irradiating said semiconductor film with a line-shaped laser beam to crystallize said semiconductor film wherein a cross section of said line-shaped laser beam at said semiconductor film is elongated in said first direction and said line-shaped laser beam is scanned in a second direction orthogonal to said first direction;
• patterning the irradiated semiconductor film into a plurality of semiconductor islands for a plurality of thin film transistors;
• forming a gate electrode adjacent to said semiconductor island;
• forming said buffer circuits wherein each of said buffer circuits comprises at least first and second circuits, each of which includes at least one of said plurality of thin film transistors,
• wherein the first and second circuits in each of said buffer circuits is connected in parallel with respect to a corresponding one of the signal lines, and one of the first and second circuits associated with one of said signal lines is located on an extension line of another one of the signal lines adjacent to said one of the signal lines.

A method of manufacturing an active matrix device having a plurality of pixels and at least one driver circuit connected to said driver circuit through a plurality of signal lines, said driver circuit including buffer circuits connected to said signal lines elongated in a first direction, said method comprising the steps of:

• forming a semiconductor film over a substrate;
• irradiating said semiconductor film with a line-shaped laser beam to crystallize said semiconductor film wherein a cross section of said line-shaped laser beam at said semiconductor film is elongated in said first direction and said line-shaped laser beam is scanned in a second direction orthogonal to said first direction;
• patterning the irradiated semiconductor film into a plurality of semiconductor islands for a plurality of thin film transistors;
• forming a gate electrode adjacent to said semiconductor island to form a plurality of thin film transistors;
• forming at least said buffer circuits, wherein each of said buffer circuits comprises at least first and second circuits, each of which includes at least one of said plurality of thin film transistors,
• wherein one of said first and second circuits of one of the buffer circuits is positioned in the same line along said first direction as one of said first and second circuits of another one of the buffer circuits.

A method of manufacturing an active matrix device having a plurality of active matrix elements and at least one driver circuit to supply signals to said active matrix elements through a plurality of signal lines extending substantially in a first direction, said driver circuit including buffer circuits connected to said signal lines, said method comprising the steps of:

• forming a semiconductor film over a substrate;
• irradiating said semiconductor film with a laser beam to crystallize said semiconductor film wherein said laser beam has a cross section which is elongated in said first direction and said laser beam is scanned in a second direction orthogonal to said first direction;
• and
• forming said active matrix elements and said buffer circuits by using the crystallized semiconductor film,
• wherein a portion of at least one of the buffer circuits is positioned in the same line along said first direction as a portion of at least another one of the buffer circuits.

A method of manufacturing an active matrix device having a plurality of active matrix elements and at least one driver circuit to supply signals to said active matrix elements through a plurality of signal lines extending substantially in a first direction, said driver circuit including buffer circuits connected to said signal lines, said method comprising the steps of:

• forming a semiconductor film over a substrate;
• irradiating said semiconductor film with a laser beam to crystallize said semiconductor film wherein said laser beam has a cross section which is elongated in said first direction and said laser beam is scanned in a second direction orthogonal to said first direction;
• and
• forming said active matrix elements and said buffer circuits by using the crystallized semiconductor film,
• wherein each of the buffer circuits is arranged obliquely with respect to said first direction so that a portion of at least one of the buffer circuits is positioned in the same line along said first direction as a portion of at least another one of the buffer circuits.