Method for surface treatment and system for fabricating semiconductor device

A production apparatus of a semiconductor device, comprising:

• holding means for holding a semiconductor substrate in a chamber;
• source gas supply means for supplying a source gas including an impurity into the chamber;
• a plasma source for generating plasma used for converting the impurity, which is included in the source gas supplied by the source gas supply means, into the form of plasma, thereby generating a first plasma impurity and a second plasma impurity in the chamber;
• introduction means for introducing the first plasma impurity into the semiconductor substrate;
• observation means for observing the state of the second plasma impurity which is generated using the plasma;
• control means for controlling a plasma process time, which represents a time interval from a time when introduction of the first plasma impurity into the semiconductor substrate is begun to a time when introduction of the first plasma impurity into the semiconductor substrate is ended, based on the observation result obtained by the observation means, such that a total dosage of the first plasma impurity, which represents a total quantity of the first plasma impurity introduced into the semiconductor substrate, becomes equal to a desired total dosage.

A surface treatment method, comprising:

• a plasma conversion step of using plasma to convert a substance into the form of plasma, thereby generating a first plasma substance and a second plasma substance;
• a step of beginning introduction of the first plasma substance, which is generated by using the plasma, into a substratum;
• a step of observing the state of the second plasma substance which is generated by using the plasma;
• a step of obtaining a dose rate of the first plasma substance introduced into the substratum, based on the observation result at the observation step,
• a step of obtaining a total dosage of the first plasma substance, which represents the total quantity of the first plasma substance introduced into the substratum, based on the dose rate obtained at the dose rate obtaining step;
• and
• a step of ending introduction of the first plasma substance into the substratum, based on the total dosage obtained at the total dosage obtaining step and a predetermined desired total dosage.