Lanthanide series layered superlattice materials for integrated circuit appalications

A method of fabricating a memory device, said method comprising:

• providing a substrate;
• forming on said substrate a memory cell, said process of forming said memory cell on said substrate including spontaneously forming a layered superlattice material structure in a thin film, said layered superlattice material including an element selected from the group consisting of cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium;
• and
• completing said memory on said substrate.

A method of fabricating an integrated circuit, said method comprising:

• providing a substrate;
• forming on said substrate a thin film of a layered superlattice material, said layered superlattice material including an element selected from the group consisting of cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium;
• and
• completing said integrated circuit on said substrate.

A method of fabricating a ferroelectric memory, said method comprising:

• forming a first electrode on a substrate;
• forming a thin film of a ferroelectric layered superlattice material on said first electrode, said layered superlaftice material including an element selected from the group consisting of cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium;
• and
• forming a second electrode on said ferroelectric layered superlattice material.

A method of fabricating a ferroelectric layered superlattice material comprising the steps of:

• providing a substrate;
• providing a liquid precursor including a plurality of metals suitable for forming a layered superlattice material, said metals including an element selected from the group consisting of cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium;
• applying said precursor liquid to said substrate;
• and
• treating said precursor on said substrate to form a layered superlattice material containing said metal on said first substrate.