US 2003/0152190 A1 · Exposing method and semiconductor device fabricated by the exposing method

Abstract

In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 Å, emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an oblique-incidence angle of 1°, transmitting the light through a beryllium window of 20 μm and through an X-ray mask prepared by forming an X-ray absorber pattern on a diamond mask substrate of 2 μm in thickness and thereafter irradiating a resist surface provided on a substrate with the light, the resist has a main absorption waveband in the wave range of at least 3 Å and not more than 13 Å and contains an element generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV upon exposure.

Claims9

Dependent claims

An exposing method of condensing or magnifying X-rays generated from an X-ray source through an X-ray mirror in a beam line, thereafter transmitting said X-rays through a window member serving as a vacuum barrier and further transmitting said X-rays through an X-ray mask consisting of a mask substrate and an absorber pattern formed thereon for irradiating a resist with said X-rays serving as exposure light, wherein

said resist has a main absorption waveband in the wave range of at least 3 Å and not more than 13 521 and contains an element, mainly absorbing said exposure light, generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV.

Dependencies are inferred from the claim text.

Exposing method and semiconductor device fabricated by the exposing method

Life of this patent

Exposing method and semiconductor device fabricated by the exposing method

Life of this patent

Abstract

Claims9