Stripe waveguide structure type semiconductor laser device and fabricating method therefor
AssigneeSharp Kabushiki Kaisha
InventorSyuzo Ohbuchi
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Abstract
There is provided a stripe waveguide structure type semiconductor laser device capable of preventing the occurrence of unevenness on the side surface of a channel and a fabricating method therefor. An etching stop layer 1 is formed under a second upper clad layer 2. This etching stop layer 1 is constructed of a GaAs layer 1a, an Al0.5Ga0.5As layer 1b formed under this GaAs layer 1a and a GaAs layer 1c formed under this Al0.5Ga0.5As layer 1b. With this arrangement, the unevenness of the side surface of the channel formed of a GaAs layer 3 and the second upper clad layer 2 can be controlled.
Claims8
A stripe waveguide structure type semiconductor laser device in which a Ga1−xAlxAs (0≦x≦0.5) active layer, a first upper clad layer, an etching stop layer, a stripe-shaped second upper clad layer and a protective layer are successively laminated on a lower clad layer,
- the second upper clad layer having different compositions in its upper portion and its lower portion, and
- the etching stop layer being comprised of three different layers.
Dependencies are inferred from the claim text.