Semiconductor memory device having internal circuit screening function
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYutaka Ikeda
Life of this patent
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Abstract
A semiconductor memory device includes an internal voltage generation circuit controlling an internal voltage supplied to an internal circuit in accordance with a reference voltage, a reference voltage generation circuit generating the reference voltage, a plurality of signal terminals for transmitting and receiving a signal to and from an outside of the semiconductor memory device, and a reference voltage change indication circuit for indicating a change of the reference voltage on the basis of a binary input signal to each of the signal terminals with respect to the reference voltage generation circuit during a test.
Claims5
A semiconductor memory device comprising:
- an internal voltage generation circuit controlling an internal voltage supplied to an internal circuit in accordance with a reference voltage;
- a reference voltage generation circuit generating said reference voltage;
- a plurality of signal terminals each for communicating a signal with an outside of said semiconductor memory device;
- and
- a reference voltage change indication circuit for indicating a change of said reference voltage on the basis of a binary input signal to each of said signal terminals with respect to said reference voltage generation circuit during a test.
Dependencies are inferred from the claim text.