Capacitive micro-electro-mechanical switch and method of manufacturing the same
AssigneeElectronics and Telecommunication Research Institute
InventorsWoo Seok Yang, Sung Weon Kang, Yun Tae Kim, Sung Hae Jung
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Abstract
The present invention relates to a capacitive micro-electro-mechanical switch and method of manufacturing the same. In the capacitive micro-electro-mechanical switch for use in the radio frequency (RF) and the microwave driven by the electrostatic force, a capacitor of a 3-dimensional structure is formed on a signal transmission line. An ON capacitance is increased without increasing an capacitor area while preventing an increase in an OFF capacitance using the capacitor. Thus, an ON/OFF capacitance ratio of the capacitive micro-electro-mechanical switch can be increased and insertion loss and isolation characteristic could be improved.
Claims30
A capacitive micro-electro-mechanical switch, comprising:
- a first line form on a substrate;
- an insulating layer having a hole through which a given region of the first line is exposed;
- a capacitor of a 3-dimensional structure formed in the hole on the first line;
- a metal post formed, on the insulating layer, in a direction vertical to the first lines from the capacitor;
- and
- a second line spaced apart from the top of the capacitor by a given gap, wherein a portion of the second line is overlapped with the capacitor and an edge of the second line is fixed to the metal post in a direction vertical to the first line.
A method of manufacturing a capacitive micro-electro-mechanical switch, comprising the steps of:
- forming a first line on a substrate;
- forming an insulating layer on the substrate and then forming a plurality of holes through which a given portion of the first line is exposed;
- sequentially forming an assistant bottom electrode, a dielectric film and an assistant top electrode at a region where a capacitor will be formed, including the hole, thus forming the capacitor;
- forming a sacrificial layer on the entire structure including the capacitor;
- forming a hole in the sacrificial layer in a direction vertical to the first line from the capacitor;
- burying the hole formed in the sacrificial layer with a conductive material to form a metal post;
- forming seconds lines a given region of which is overlapped with the capacitor and an end portion of which is connected to the metal post;
- and
- removing the sacrificial layer.
A method of manufacturing a capacitive micro-electro-mechanical switch, comprising the steps of:
- forming a first line on a substrate;
- forming a capacitor of a multi-layered shape at a given region of the first line, in which assistant bottom electrode layer and the first line are electrically connected at one edge of the first line while the assistant bottom electrode layers and assistant top electrode layers are alternately stacked and the assistant top electrode layers are connected one another at the other edge of the first line, wherein the capacitor has a dielectric film between the assistant bottom electrode layers and the assistant top electrode layers;
- forming an insulating layer up to the height of the capacitor so that the surface of the uppermost layer of the assistant top electrode layers is exposed;
- forming a sacrificial layer on the entire structure including the capacitor;
- forming a hole in the sacrificial layer in a direction vertical to the first line from the capacitor;
- burying the hole formed in the sacrificial layer with a conductive material to form a metal post;
- forming a second line, wherein a portion region of the second line is overlapped with the capacitor and an end portion of the second line is connected to the metal post;
- and
- removing the sacrificial layer.
Dependencies are inferred from the claim text.