Long-band erbium doped fiber amplifier
AssigneeSamsung Electronics Co., Ltd.
InventorsKwan-Woong Song, Seong-Taek Hwang
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AssigneeSamsung Electronics Co., Ltd.
InventorsKwan-Woong Song, Seong-Taek Hwang
Estimating the term…
The present invention discloses a long-band Erbium doped-fiber amplifier including: a first Erbium doped fiber with a predetermined length, coupled to a first pumping light source through a first wavelength-selective coupler, for amplifying a C-band optical signal by supplied pumping light; a second Erbium doped fiber with a predetermined length for amplifying an L-band optical signal by a second pumping light source; a feedback loop for recycling a specific C-band wavelength generated in the amplification of the first Erbium doped fiber as the second pumping light source of the L-band optical signal; a tap coupler formed between the first and second Erbium doped fibers, for dividing the optical power amplified in the first Erbium doped fiber, for supplying a predetermined ratio of optical power to the second Erbium doped fiber, and for re-inputting the residual optical power to the feedback loop; and, a second wavelength-selective coupler for coupling the signal light transmitted from the tap coupler to the first Erbium doped fiber.
A long-band Erbium doped-fiber amplifier comprising:
A long-band Erbium doped fiber amplifier comprising:
Dependencies are inferred from the claim text.