Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power Density conditions

A plasma processing chamber configured to receive a gas, comprising:

• a first powered electrode configured to receive a workpiece, said first powered electrode having a first electrode area;
• a power generator operatively coupled to said first powered electrode and configured to communicate power to said first powered electrode;
• a second electrode disposed above said first powered electrode, said first powered electrode and said second electrode configured to convert said gas to a plasma;
• a ground extension adjacent said powered electrode and surrounding said first powered electrode, said ground extension separated from said first powered electrode by a dielectric;
• and
• at least one confinement ring configured to confine said plasma, said at least one confinement ring surrounding said first powered electrode.

A method for generating a confined plasma in a plasma processing chamber, comprising:

• receiving a gas in said plasma processing chamber;
• causing a first electrode to receive a workpiece, said first electrode operatively coupled to a power supply;
• causing a second electrode disposed at a distance from said first electrode to receive RF power from said first electrode, said second electrode having a second electrode area that is greater than said first electrode area;
• engaging a power supply to communicate RF power to said first electrode to generate a plasma;
• and
• causing a ground extension adjacent said first electrode to drain a plurality of charge from said plasma.