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US 2003/0151141 A1Published application
External connection terminal and semiconductor device
AssigneeFujitsu Limited
InventorsHirohisa Matsuki, Yutaka Makino, Masamitsu Ikumo, Mitsutaka Sato, Tetsuya Fujisawa, Yoshitaka Aiba
Life of this patent
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Abstract
There is provided a structure in which a phosphorus-nickel layer, a rich phosphorus nickel layer that contains phosphorus or boron higher than this phosphorus-nickel layer, a nickel-tin ally layer, a tin-rich tin alloy layer, and a tin alloy solder layer are formed in sequence on an electrode. Accordingly, adhesiveness between a metal pattern used as the electrode, the wiring, or the pad and the solder can be improved.
Claims43
An external connection terminal comprising:
- an electrode formed on a substrate or an insulating film formed on the substrate;
- a first-element containing nickel layer formed as a barrier metal on the electrode to contain a first element consisting of any one of phosphorus and boron;
- a rich first-element containing nickel layer formed on the first-element containing nickel layer to contain the first element higher than the first-element containing nickel layer;
- a nickel-tin alloy layer formed on the rich first-element containing nickel layer;
- a tin alloy layer formed on the nickel-tin alloy layer;
- and
- a tin alloy solder layer formed on the tin alloy layer.
4 more elements
An external connection terminal comprising:
- an electrode formed on a substrate or an insulating film formed on the substrate;
- a first-element containing nickel-copper layer formed as a barrier metal on the electrode to contain a first element consisting of any one of phosphorus and boron;
- a rich first-element containing nickel-copper layer formed on the first-element containing nickel-copper layer to contain the first element higher than the first-element containing nickel-copper layer;
- a nickel-copper-tin alloy layer formed on the rich first-element containing nickel-copper layer;
- and
- a tin alloy solder layer formed on the nickel-copper-tin alloy layer.
3 more elements
A semiconductor device comprising:
- an interlayer insulating film formed on a semiconductor substrate;
- a metal pattern in which first openings are formed to expose the metal patterns;
- projection-like electrodes connected electrically to the metal pattern via the first openings;
- an organic insulating film formed on the inorganic insulating film and having second openings to expose at least upper portions of the projection-like electrodes;
- an underlying metal layer and a solder layer formed on at least upper surfaces of the projection-like electrodes;
- and
- a coating film formed on at least one of a back surface and side surfaces of the semiconductor substrate and made of resin or metal.
4 more elements
Dependencies are inferred from the claim text.